What is difficulty for EUV resist?
- Location: Ridgway, Aadityana, Pennsylvania, United States
It enables the exposure of fine circuit patterns with a half-pitch of less than 20 nm that would be impossible to expose with an ArF excimer laser otherwise. The goal for ultrahigh-resolution (R), low line edge roughness (L), and high sensitivity all at the same time is well-known as a major difficulty for EUV resists (S).
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