What is difficulty for EUV resist?
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Published date: September 28, 2021
Modified date: September 28, 2021
- Location: Ridgway, Aadityana, Pennsylvania, United States
One of the most promising materials for producing semiconductor devices at the sub-14nm half-pitch lines and spaces (LS) pattern for nodes as small as 7 nm and beyond is extreme ultraviolet (EUV) lithography. With a wavelength of 13.5 nm, it is one of the most popular alternatives for next-generation lithography.
It enables the exposure of fine circuit patterns with a half-pitch of less than 20 nm that would be impossible to expose with an ArF excimer laser otherwise. The goal for ultrahigh-resolution (R), low line edge roughness (L), and high sensitivity all at the same time is well-known as a major difficulty for EUV resists (S).
It enables the exposure of fine circuit patterns with a half-pitch of less than 20 nm that would be impossible to expose with an ArF excimer laser otherwise. The goal for ultrahigh-resolution (R), low line edge roughness (L), and high sensitivity all at the same time is well-known as a major difficulty for EUV resists (S).
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